MOEA, ITRI and UCLA to Collaborate on Development of Cutting-Edge Memory Technology

According to the DoIT, the MOEA has a long history of investing in the semiconductor industry and has encouraged ITRI in the R&D of Spin-Orbit Torque (SOT) MRAM technology. Based on the achievements, ITRI and UCLA also collaborated on VC-MRAM, which has 50% faster write speed and 75% lower power consumption than SOT-MRAM and is therefore ideal for AIoT and automotive industry applications. The partnership is expected to strengthen the bond between the two parties, accelerate the R&D and industrialization of new memory technologies, and help companies adopt advanced manufacturing processes at an early stage to improve their industrial competitiveness.

Dr. Chih-I Wu, Vice President and General Manager of Electronics and Optoelectronics Systems Research Laboratories at ITRI, pointed out that the advantages of VC-MRAM, such as fast read/write and low power consumption energy, make it suitable for energy saving and low carbon. emissions applications, presenting a golden opportunity for ITRI’s collaboration with UCLA. “This is the first time that ITRI has received actual funding from DARPA under a cooperative initiative. We believe that our strengths can be combined to further the development of VC-MRAM technology,” said- he declared.

dr. Kang WangEmeritus Professor and Raytheon Chair in Electrical Engineering at UCLA, noted that ITRI, as an internationally renowned applied research institution, has unique and formidable technical expertise and capabilities. It has a strong foundation and R&D strengths in MRAM technology, and both sides should be able to build on their respective foundations through their cooperation, yielding even more groundbreaking achievements.

Professor at UCLA and Director of the Circuits and Embedded Systems field, Dr. Sudhakar Pamarti said ITRI has platforms and experience in component development and manufacturing verification. By implementing the innovative ideas of UCLA in process development, the development of hardware components will be promoted to related applications. He expects that by early 2023, the advanced technology developed through this cooperation will create an entirely new paradigm in next-generation memory.

ITRI ​​began cultivating MRAM technology years ago, including component innovation, material breakthroughs and circuit optimization, and is poised to meet the demands of fast big data processing. in the age of AI and 5G. This is one of the examples that demonstrates ITRI’s commitment to promoting enabling intelligence technologies and fostering innovative applications. ITRI ​​will continue to partner with industry, academic and research organizations to help industries upgrade their technology, explore new solutions and create new possibilities.

About ITRI

The Industrial Technology Research Institute (ITRI) is one of the world’s leading technology R&D institutions aimed at innovating for a better future for society. Founded in 1973, ITRI has played a key role in transforming Taiwan from labour-intensive to innovation-driven industries. To respond to market needs and global trends, it launched its 2030 technology strategy and roadmap and focuses on developing innovation in the areas of smart life, quality health and sustainable environment. It also strives to strengthen intelligence enabling technology to support diversified applications.

Over the years, ITRI has been dedicated to incubating startups and spin-offs, including well-known names such as UMC and TSMC. In addition to its headquarters at TaiwanITRI ​​has branches in the United States, Europeand Japan with the aim of expanding its R&D scope and promoting international cooperation around the world. For more information, please visit https://www.itri.org/eng.

SOURCE Industrial Technology Research Institute


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